ALD (Atomic Layer Deposition) |
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ALD systems and equipment for research to pilot lines, from thermal ALD equipment to plasma ALD equipment. |
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Email :contrabase26@gmail.com |
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AT200M |
AT410 |
AT650P |
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AT200M(±Û·¯ºê¹Ú½º¿¡ µé¾î°¥ ¸¸Å ÀÛÀº Å©±â)Àº ½ÃÁß¿¡¼ ±¸ÀÔÇÒ ¼ö ÀÖ´Â °¡Àå ÀÛÀº Å©±âÀÇ ALD(¿øÀÚÃþ ÁõÂø) ½Ã½ºÅÛÀÔ´Ï´Ù. |
4ÀÎÄ¡ AT410 ¸ðµ¨Àº ¸ÂÃãÇü ô/Ç÷¡Æ° ¶Ç´Â è¹ö(3D ºÎÇ°¿ë)¸¦ °®Ãá ½ÃÁß¿¡¼ °¡Àå °¡¼ººñ³ôÀº ½á¸Ö ALD ÀåºñÀÔ´Ï´Ù. |
6ÀÎÄ¡ AT650P´Â ´Ù¿î½ºÆ®¸² ÇöóÁ¸¦ °®Ãá ºñ¿ë È¿À²ÀûÀÎ µ¥½ºÅ©Åé ÇöóÁ ALD ½Ã½ºÅÛÀÔ´Ï´Ù. |
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AT650T´Â ÇöóÁ·Î ¾÷±×·¹À̵尡 °¡´ÉÇÑ 6ÀÎÄ¡ µ¥½ºÅ©Åé ½á¸Ö ALD ½Ã½ºÅÛÀÔ´Ï´Ù. |
ATOzone(¿ÀÁ¸ ¹ß»ý±â) ½Ã½ºÅÛÀº ¾ÆÁÖ ÀÛÀº Å©±â·Î °í³óµµ(ÃÖ´ë 12%) ¿ÀÁ¸À» Àü´ÞÇÏ´Â °íÇ°Áú ¿ÀÁ¸ ¹ß»ý±â ÀÔ´Ï´Ù. |
AT610Àº ½ÃÀå¿¡¼ °¡Àå ºñ¿ë È¿À²ÀûÀÎ 6ÀÎÄ¡ µ¥½ºÅ©Å¾½á¸Ö ALD ½Ã½ºÅÛÀÔ´Ï´Ù. ¸ÂÃãÇü ô/è¹ö/Ç÷¡Æ°(¼ÒÇü ¶Ç´Â 3D ºÎÇ°¿ë). Á¤»ç°¢Çü ±âÆÇÀ» °íÁ¤ÇÒ ¼ö ÀÖ½À´Ï´Ù. |
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AT810 ¸ðµ¨Àº 8ÀÎÄ¡ µ¥½ºÅ©Å¾ ¿ ALD ½Ã½ºÅÛÀÔ´Ï´Ù. ¸ÂÃãÇü ô/è¹ö/Ç÷¡Æ°(¼ÒÇü,3D ºÎÇ° ¶Ç´Â ´ÙÁß ºÎÇ°¹èÄ¡ ¿ë). Á¤»ç°¢Çü ±âÆÇÀ» °íÁ¤ÇÒ ¼ö ÀÖ½À´Ï´Ù. |
°ÇÑ ÀÚ±âÀå¿¡ ÀÇÇÑ °í¹Ðµµ ÇöóÁ ½ºÆÛÅ͸µ ¼Ò½º¸¦ ÀÌ¿ëÇÏ¿© ³·Àº °¡½º¾Ð·Â¿¡¼ »ê¼Ò¿¡ ¿µÇâ°ú ÇöóÁ¿¡ ÀÇÇÑ ¼Õ»óÀÌ ¾ø´Â °í¼øµµ±Ý¼Ó, »ï¿ø°è ±Ý¼Ó ¹× ÀüµµÃ¼ ¹Ú¸· Áø°ø ÁõÂø °¡´É. |
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ALD Systems ComparisonCompare ALD equipment and systems manufacturedAnric Technologies. Compare by size and capability. |
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AT200M |
AT410M/610/810 |
AT650T |
AT650P |
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Desktop (W: ~11¡± (27.9cm) x D: 15¡± (38.1cm) x H: 14.5¡± (36.8cm)) | Desktop (W: 24.5¡± (62.3cm) x D: 24¡± (61cm) x H: 15.75¡± (40.5cm))[610 D: 25¡È (63.5cm)] | Desktop (W: 15¡± (38.1cm) x D: 15¡± (38.1cm) x H: Less that 38¡± (96.5cm)) | Desktop (W: 15¡± (38.1cm) x D: 15¡± (38.1cm) x H: 38¡± (96.5cm)) | |||||
Sample Size = 2 inch (x2) up to 2 x 2 x 2¡± volume | 410 = 4 inch; 610 = 6 inch; 810 = 8 inch | 6 inch | 6 inch | |||||
Thermal to 300¡ÆC | Thermal to 320¡ÆC | Thermal to 400¡ÆC (upgradeable to Plasma) |
Plasma and Thermal to 400¡ÆC |
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One Precursor/One Counter Reactant |
Three Precursors/ Up to Three Counter Reactants |
Four Precursors/Four Counter Reactants |
Four Precursors/Four Counter Reactants |
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Heated Precursor to 150¡ÆC | Heated Precursor to 180¡ÆC (N2 Assist Available) | 3 Precursors to 185¡ÆC (with optional pressure boost) , 1 at RT | 3 Precursors to 185¡ÆC (with optional pressure boost) , 1 at RT | |||||
All stainless steel chamber and metal sealed stainless lines | All aluminum chamber (hot walled) and metal sealed stainless lines | All aluminum chamber (warm walled) and metal sealed stainless lines and chuck | All aluminum chamber (warm walled) and metal sealed stainless lines and chuck | |||||
Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves | |||||
Ultrafast MFC | Ultrafast MFC | Up to four ultrafast MFCs | Up to four ultrafast MFCs | |||||
5¡± Display w. Integrated PLC |
7¡° Display with integrated PLC |
10¡° Display with integrated PLC |
10¡° Display with integrated PLC |
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±¹Á¦ À¯Åë´ÜÁö 17µ¿ 127È£ Contact us :contrabase26@gmail.com jsi@jsits.com |
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