ALD (Atomic Layer Deposition)
 
               
 

ALD systems and equipment for research to pilot lines, from thermal ALD equipment to plasma ALD equipment.
Shop by size and capability, or compare our systems using the button below.


 
           
           
               
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AT200M
AT410
AT650P
AT650T
AT-OZONE Generator
AT610
AT810

 

             
 
 

AT200M

AT410

AT650P

AT200M(±Û·¯ºê¹Ú½º¿¡ µé¾î°¥ ¸¸Å­ ÀÛÀº Å©±â)Àº ½ÃÁß¿¡¼­ ±¸ÀÔÇÒ ¼ö ÀÖ´Â °¡Àå ÀÛÀº Å©±âÀÇ ALD(¿øÀÚÃþ ÁõÂø) ½Ã½ºÅÛÀÔ´Ï´Ù.
4ÀÎÄ¡ AT410 ¸ðµ¨Àº ¸ÂÃãÇü ô/Ç÷¡Æ° ¶Ç´Â è¹ö(3D ºÎÇ°¿ë)¸¦ °®Ãá ½ÃÁß¿¡¼­ °¡Àå °¡¼ººñ³ôÀº ½á¸Ö ALD ÀåºñÀÔ´Ï´Ù.
6ÀÎÄ¡ AT650P´Â ´Ù¿î½ºÆ®¸² ÇöóÁ¸¦ °®Ãá ºñ¿ë È¿À²ÀûÀÎ µ¥½ºÅ©Åé ÇöóÁ ALD ½Ã½ºÅÛÀÔ´Ï´Ù.

AT650T

AT-OZONE Generator

AT610

AT650T´Â ÇöóÁ·Î ¾÷±×·¹À̵尡 °¡´ÉÇÑ 6ÀÎÄ¡ µ¥½ºÅ©Åé ½á¸Ö ALD ½Ã½ºÅÛÀÔ´Ï´Ù.
ATOzone(¿ÀÁ¸ ¹ß»ý±â) ½Ã½ºÅÛÀº ¾ÆÁÖ ÀÛÀº Å©±â·Î °í³óµµ(ÃÖ´ë 12%) ¿ÀÁ¸À» Àü´ÞÇÏ´Â °íÇ°Áú ¿ÀÁ¸ ¹ß»ý±â ÀÔ´Ï´Ù.
AT610Àº ½ÃÀå¿¡¼­ °¡Àå ºñ¿ë È¿À²ÀûÀÎ 6ÀÎÄ¡ µ¥½ºÅ©Å¾½á¸Ö ALD ½Ã½ºÅÛÀÔ´Ï´Ù.
¸ÂÃãÇü ô/è¹ö/Ç÷¡Æ°(¼ÒÇü ¶Ç´Â 3D ºÎÇ°¿ë).
Á¤»ç°¢Çü ±âÆÇÀ» °íÁ¤ÇÒ ¼ö ÀÖ½À´Ï´Ù.
sputter

AT810

Sputter
AT810 ¸ðµ¨Àº 8ÀÎÄ¡ µ¥½ºÅ©Å¾ ¿­ ALD ½Ã½ºÅÛÀÔ´Ï´Ù.
¸ÂÃãÇü ô/è¹ö/Ç÷¡Æ°(¼ÒÇü,3D ºÎÇ° ¶Ç´Â ´ÙÁß ºÎÇ°¹èÄ¡ ¿ë).
Á¤»ç°¢Çü ±âÆÇÀ» °íÁ¤ÇÒ ¼ö ÀÖ½À´Ï´Ù.
°­ÇÑ ÀÚ±âÀå¿¡ ÀÇÇÑ °í¹Ðµµ ÇöóÁ ½ºÆÛÅ͸µ ¼Ò½º¸¦ ÀÌ¿ëÇÏ¿©
³·Àº °¡½º¾Ð·Â¿¡¼­ »ê¼Ò¿¡ ¿µÇâ°ú ÇöóÁ¿¡ ÀÇÇÑ ¼Õ»óÀÌ ¾ø´Â
°í¼øµµ±Ý¼Ó, »ï¿ø°è ±Ý¼Ó ¹× ÀüµµÃ¼ ¹Ú¸· Áø°ø ÁõÂø °¡´É.

 

                 
 

ALD Systems Comparison

Compare ALD equipment and systems manufacturedAnric Technologies. Compare by size and capability.

 
                 
 
AT200M
AT410M/610/810
AT650T
AT650P
 
 
 
  Desktop (W: ~11¡± (27.9cm) x D: 15¡± (38.1cm) x H: 14.5¡± (36.8cm))   Desktop (W: 24.5¡± (62.3cm) x D: 24¡± (61cm) x H: 15.75¡± (40.5cm))[610 D: 25¡È (63.5cm)]   Desktop (W: 15¡± (38.1cm) x D: 15¡± (38.1cm) x H: Less that 38¡± (96.5cm))   Desktop (W: 15¡± (38.1cm) x D: 15¡± (38.1cm) x H: 38¡± (96.5cm))  
  Sample Size = 2 inch (x2) up to 2 x 2 x 2¡± volume   410 = 4 inch; 610 = 6 inch; 810 = 8 inch   6 inch   6 inch  
  Thermal to 300¡ÆC   Thermal to 320¡ÆC   Thermal to 400¡ÆC
(upgradeable to Plasma)
  Plasma and Thermal to
400¡ÆC
 
  One Precursor/One Counter
Reactant
  Three Precursors/ Up to Three Counter
Reactants
  Four Precursors/Four
Counter Reactants
  Four Precursors/Four
Counter Reactants
 
  Heated Precursor to 150¡ÆC   Heated Precursor to 180¡ÆC (N2 Assist Available)   3 Precursors to 185¡ÆC (with optional pressure boost) , 1 at RT   3 Precursors to 185¡ÆC (with optional pressure boost) , 1 at RT  
  All stainless steel chamber and metal sealed stainless lines   All aluminum chamber (hot walled) and metal sealed stainless lines   All aluminum chamber (warm walled) and metal sealed stainless lines and chuck   All aluminum chamber (warm walled) and metal sealed stainless lines and chuck  
  Heated lines and fast pulsing ALD valves   Heated lines and fast pulsing ALD valves   Heated lines and fast pulsing ALD valves   Heated lines and fast pulsing ALD valves  
  Ultrafast MFC   Ultrafast MFC   Up to four ultrafast MFCs   Up to four ultrafast MFCs  
  5¡± Display w. Integrated
PLC
  7¡° Display with integrated
PLC
  10¡° Display with integrated
PLC
  10¡° Display with integrated
PLC
 
                 

 

     
 

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